Dr. Prashant Mani (Faculty)

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Dr. Prashant Mani

Associate Professor,
Electronics & Communication

9835893396   |   [email protected]



Qualifications
Bachelor of Technology - Electronics & Instrumentation Engineering
2006
VBS Purvanchal University
Master of Technology - Electronics & Instrumentation Engineering (VLSI)
2008
SRM University, Chennai
Ph.D. - Electronics & Communication Engineering
2016
SRM University, Chennai
Subject Expertise

Undergraduate

Nano Electronics,
Introduction to Nanotechnology,
VLSI design,
Multigate Transistor,
Digital Image Processing.

Postgraduate

Mixed Signal
Circuit Design,
Nano Scale Device,
Fundamentals of Nano electronics

Area Of Research

Nano Scale Device,
SOI MOSFET,
Modeling & Analysis of Semiconductor

Professional Experience
ASSOCIATE PROFESSOR

June 2018 - July 2022
SRM University, Ghaziabad, Uttar Pradesh, India

ASSISTANT PROFESSOR

July 2008 - June 2018
SRM University, Ghaziabad, Uttar Pradesh, India

List Of Publications

Research Publications:

International Journal Publications :
  1. Arjimand Ashaf, Manisha Tyagi, Prashant Mani: To study high-performance analysis of surround gate SOI MOSFET. International Journal of Engineering & Technology 1/2018;7(2.8)
    (SCOPUS Indexed)
  2. Aditya Agarwal, R L Sharma, Prashant Mani: A Study of Characterization of Surrounding Gate MOSFET. VSRD International Journal of Technical and Non-Technical Research 1/2018;9(1)
  3. Arjimand Ashaf, Prashant Mani: Investigation On the Analysis of Single Material Surrounded Gate SOI MOSFET, International Journal of Engineering & Science Research 4/2018;8(3)
  4. Mehnoor Dhar, Prashant Mani, Abhishek Chauhan: Investigation Of Temperature Effect In ULTRA THIN SOI MOSFET, International Journal of Engineering & Science Research 4/2018;8(3)
  5. Saloni Goel, Prashant Mani: Analysis of Subthreshold Drain Current for Pocket Implanted MOSFETs. International Journal of Control Theory and Applications 3/2017; 10(6). (SCOPUS Indexed)
  6. Prashant Mani, Manoj Kumar Pandey: Modeling & Analysis of Surface Potential and Threshold Voltage for Narrow channel 3D FDSOI MOSFET. International Journal of Control Theory and Applications 10/2016; 9(22). (SCOPUS Indexed)
  7. ShaillyGarg, Prashant Mani: Analytical Modeling and Characterization Of Cylindrical Gate All Around MOSFET, International Journal of Advance Research In Science and Engineering 04/2016:5(4)
  8. Prashant Mani: Modeling and analysis of the surface potential of the single gate fully depleted SOI MOSFET using 2D-Poisson’s equation. AIP Conference Proceedings 03/2016; 1715(1). DOI:10.1063/1.4942696(SCOPUS Indexed)
  9. Prashant Mani, Manoj K. Pandey: Simulation Analysis of Narrow Width Effect in Nano-Structured Fully Depleted SOI MOSFET. Procedia Computer Science 08/2015; 57. DOI:10.1016/j.procs.2015.07.428(SCOPUS Indexed)
  10. Prashant Mani, Manoj Kumar Pandey: Surface Potential and Threshold Voltage Model of Fully Depleted Narrow Channel SOI MOSFET Using Analytical Solution of 3D Poisson’s Equation. Journal of Nano- and Electronic Physics 06/2015; 7(2). (SCOPUS Indexed)
  11. Prashant Mani, Akhilbapna: Comparison of CMOS and CNFET Based Op-Amp. International Journal of VLSI Design and Communication Systems 04/2015;
  12. Prashant Mani, Shivam Sharma: Analysis of Narrow Channel Single Gate Fully Depleted SOI MOSFET. International Journal of Engineering Research & Management Technology.
  13. Prashant Mani, Manoj K. Pandey: Simulation Analysis Of Conduction In Ultra Thin Nano Scale Fully Depleted SOI MOSFET, International Journal of ChemTech Research. International Journal of ChemTech Research 02/2015; 7(2). (SCOPUS Indexed)
  14. Prashant Mani, Priya Sinha: Design And Implementation OfViterbi Encoder And decoder Using FPGA With VHDL. International Journal of Engineering Science 12/2013;
  15. Prashant Mani, ManojK.Pandey: Analytical Solution of 2d Poisson’s Equation Using Separation of Variable Method for FDSOI MOSFET: IJECE(2012)
  16. Prashant Mani,ManojK.Pandey: Silicon on Insulator MOSFET Development from Single Gate to Multiple Gate IJARCSSE,2011
  17. Prashant Mani. R.P.Mahapatra, Junaid Khan: VLSI Implementation Of FIR Filter Using Processor: IJERIA,2009.
  18. Prashant Mani R. P. Mahapatra, Junaid Khan: Bit Error Rate For Different Diversity Combining Schemes & Channel Estimation Evaluation In Multi-User Ds-Cdma System Using Different Modulation Techniques: IJERIA 2009.

International Conferences :
  1. Prashant Mani, ManojK.Pandey: Simulation Analysis Of Conduction In Ultra Thin Nano Scale Fully Depleted SOI MOSFET. International Conference on Nanoscience and Nanotechnology; 02/2015
  2. Prashant ManiManojK.Pandey: Analytical Solution of 2d Poisson’s Equation Using Separation of Variable Method for FDSOI MOSFET. International Conference on Communication Systems, B K Birla Institute of Engineering & Technology (BKBIET), Pilani, India; 11/2013
  3. Subhashree Behra, Prashant Mani, Variation of Backscattered Brillouin Power an Effective Tool for Sensing Temperature. International Conference on Micro-Electronics and Telecommunication Engineering (ICMETE), SRM University,
    DOI: 10.1109/ICMETE.2016.105, Sept 2016(SCOPUS Indexed)
  4. AradhanaMishra, Prashant Mani: Analysis of Different Human Emotions with EEG Signal Using Back Propagation Method. International Conference on Micro-Electronics and Telecommunication Engineering (ICMETE), SRM University,
    DOI: 10.1109/ICMETE.2016.105, Spt. 2016(SCOPUS Indexed)
  5. Prashant Mani ,ManojK.Pandey: Simulation Analysis of Narrow Width Effect in Nano-Structured Fully Depleted SOI MOSFET. Third International Conference on Recent Trends in Computing (ICRTC2015); 03/2015
  6. C.S Tyagi, R. L. Sharma, Prashant Mani: Analysis Of Ultra Thin Nano scale DG SOIMOSFETs. International Conference on Recent Trends In Computing (IRCTC2017),12/2017
    Membership
    1. International Association Of Engineers(IAENG) Member No.153138
    2. Institute of Research Engineers & Doctors(IRED) Member No.SM1010003240
    3. Institution of Engineers (IE) Member
    Awards and Honors

    Best Service Award - INSO AWARD 2022

    International Scientist Awards on Engineering, Science, and Medicine
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